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RFD16N05LSM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.4
2.5
1.3
1.2
I D = 16V
V DS = 15V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX.
2.0
I D = 16A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX.
1.1
1.0
0.9
0.8
0.7
0.6
1.5
1.0
0.5
0.5
4
5
6
7
0
-50
0
50
100
150
200
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.4
1.3
I D = 250 μ A
V GS = V DS
1.4
I D = 250 μ A
1.2
1.2
1.1
1.0
0.9
1.0
0.8
0.8
0.6
0.7
0.6
-50
0
50
100
150
200
0
-50
0
50
100
150
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 9. NORMALIZED GATE THRESHOLD vs JUNCTION
TEMPERATURE
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2000
1600
V GS = 0V
f = 1MHz
50
37.5
R L = 3.125 ?, V GS = 5V
I G(REF) = 0.60mA
PLATEAU VOLTAGES IN
DESCENDING ORDER:
10
8
V DD = BV DSS V DD = 0.50 BV DSS V DD = BV DSS
1200
800
400
C ISS = C GS + C GD
C RSS = C GD
C OSS ≈ C DS + C GD
C ISS
C OSS
25
12.5
V DD = BV DSS
V = 0.75 BV
DD DSS
V DD = 0.25 BV DSS
GATE
SOURCE
VOLTAGE
6
4
2
C RSS
DRAIN SOURCE VOLTAGE
I G ( REF )
I G ( REF )
0
0
5 10 15 20
V DS, DRAIN TO SOURCE VOLTAGE (V)
25
0
20 -------------------------
I G ( ACT )
t, TIME ( μ s)
80 -------------------------
I G ( ACT )
0
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
?2003 Fairchild Semiconductor Corporation
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
RFD16N05LSM Rev. C1
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